ReP USP - Resultado da busca

Artigo de periodico
Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications (2023)
Paula, Kelly Tasso de ; Santos, Sabrina Nicoleti Carvalho dos ; Facure, Murilo Henrique Moreira ; Araújo, Francineide Lopes de ; Andrade, Marcelo Barbosa de ; Corrêa, Daniel Souza ; Mendonça, Cleber Renato
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: LASER, NANOPARTÍCULAS, SEMICONDUTORES, FILMES FINOS, ÓPTICA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAULA, Kelly Tasso de et al. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications. Journal of Applied Physics, v. 133, n. 5, p. 053103-1-053103-10, 2023Tradução . . Disponível em: https://doi.org/10.1063/5.0137926. Acesso em: 10 maio 2024.
APA
Paula, K. T. de, Santos, S. N. C. dos, Facure, M. H. M., Araújo, F. L. de, Andrade, M. B. de, Corrêa, D. S., & Mendonça, C. R. (2023). Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications. Journal of Applied Physics, 133( 5), 053103-1-053103-10. doi:10.1063/5.0137926
NLM
Paula KT de, Santos SNC dos, Facure MHM, Araújo FL de, Andrade MB de, Corrêa DS, Mendonça CR. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications [Internet]. Journal of Applied Physics. 2023 ; 133( 5): 053103-1-053103-10.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/5.0137926
Vancouver
Paula KT de, Santos SNC dos, Facure MHM, Araújo FL de, Andrade MB de, Corrêa DS, Mendonça CR. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications [Internet]. Journal of Applied Physics. 2023 ; 133( 5): 053103-1-053103-10.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/5.0137926
Artigo de periodico
Flexible metasurfaces as sub-6 GHz frequency selective surfaces for 5G applications (2023)
Materon, Elsa Maria ; Filgueiras, Hugo Rodrigues Dias ; Vilas Boas, Evandro Cesar ; Gómez, Faustino Reyes ; Cavalcanti, Francisco Rodrigo Porto ; Silva, Yuri Carvalho Barbosa ; Sodre Junior, Arismar Cerqueira ; Figueiredo, Felipe Augusto Pereira de ; Mendes, Luciano Leonel ; Oliveira Junior, Osvaldo Novais de ; Mejía-Salazar, Jorge Ricardo
Source: Journal of Applied Physics. Unidades: IFSC, IQSC
Subjects: TELECOMUNICAÇÕES, INTERNET, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MATERON, Elsa Maria et al. Flexible metasurfaces as sub-6 GHz frequency selective surfaces for 5G applications. Journal of Applied Physics, v. 134, n. 14, p. 145304-1-145304-9, 2023Tradução . . Disponível em: https://doi.org/10.1063/5.0167167. Acesso em: 10 maio 2024.
APA
Materon, E. M., Filgueiras, H. R. D., Vilas Boas, E. C., Gómez, F. R., Cavalcanti, F. R. P., Silva, Y. C. B., et al. (2023). Flexible metasurfaces as sub-6 GHz frequency selective surfaces for 5G applications. Journal of Applied Physics, 134( 14), 145304-1-145304-9. doi:10.1063/5.0167167
NLM
Materon EM, Filgueiras HRD, Vilas Boas EC, Gómez FR, Cavalcanti FRP, Silva YCB, Sodre Junior AC, Figueiredo FAP de, Mendes LL, Oliveira Junior ON de, Mejía-Salazar JR. Flexible metasurfaces as sub-6 GHz frequency selective surfaces for 5G applications [Internet]. Journal of Applied Physics. 2023 ; 134( 14): 145304-1-145304-9.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/5.0167167
Vancouver
Materon EM, Filgueiras HRD, Vilas Boas EC, Gómez FR, Cavalcanti FRP, Silva YCB, Sodre Junior AC, Figueiredo FAP de, Mendes LL, Oliveira Junior ON de, Mejía-Salazar JR. Flexible metasurfaces as sub-6 GHz frequency selective surfaces for 5G applications [Internet]. Journal of Applied Physics. 2023 ; 134( 14): 145304-1-145304-9.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/5.0167167
Artigo de periodico
Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well (2019)
Patricio, M. A. Tito; LaPierre, R. R.; Pusep, Yuri A.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PATRICIO, M. A. Tito e LAPIERRE, R. R. e PUSEP, Yuri A. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, v. 125, n. 15, p. 155703-01-155703-06, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5085493. Acesso em: 10 maio 2024.
APA
Patricio, M. A. T., LaPierre, R. R., & Pusep, Y. A. (2019). Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, 125( 15), 155703-01-155703-06. doi:10.1063/1.5085493
NLM
Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.5085493
Vancouver
Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.5085493
Artigo de periodico
Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics (2019)
Ochoa, Diego A.; Casals, Jorge A.; Venet, Michel; M'Peko, Jean Claude; García, Jose E.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: CERÂMICA, ÓPTICA NÃO LINEAR, FERROELETRICIDADE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
OCHOA, Diego A. et al. Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics. Journal of Applied Physics, v. 125, n. Ja 2019, p. 024101-1-024101-8, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5067243. Acesso em: 10 maio 2024.
APA
Ochoa, D. A., Casals, J. A., Venet, M., M'Peko, J. C., & García, J. E. (2019). Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics. Journal of Applied Physics, 125( Ja 2019), 024101-1-024101-8. doi:10.1063/1.5067243
NLM
Ochoa DA, Casals JA, Venet M, M'Peko JC, García JE. Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics [Internet]. Journal of Applied Physics. 2019 ; 125( Ja 2019): 024101-1-024101-8.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.5067243
Vancouver
Ochoa DA, Casals JA, Venet M, M'Peko JC, García JE. Dielectric and piezoelectric nonlinear properties of slightly textured lead barium niobate ceramics [Internet]. Journal of Applied Physics. 2019 ; 125( Ja 2019): 024101-1-024101-8.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.5067243
Artigo de periodico
Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures (2019)
Pereira, Alessandra; Conte, Gilmar; Faceto, Angelo Danilo; Nunes, Luiz Antônio de Oliveira; Quirino, Welber G.; Legnani, Cristiano; Gallardo, Hugo; Cremona, Marco; Bechtold, Ivan H.; Guimarães, Francisco Eduardo Gontijo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: LUMINESCÊNCIA, EMISSÃO DA LUZ, FILMES FINOS, ÓPTICA NÃO LINEAR
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PEREIRA, Alessandra et al. Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures. Journal of Applied Physics, v. 126, n. 16, p. 165501-1-165501-9, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5099014. Acesso em: 10 maio 2024.
APA
Pereira, A., Conte, G., Faceto, A. D., Nunes, L. A. de O., Quirino, W. G., Legnani, C., et al. (2019). Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures. Journal of Applied Physics, 126( 16), 165501-1-165501-9. doi:10.1063/1.5099014
NLM
Pereira A, Conte G, Faceto AD, Nunes LA de O, Quirino WG, Legnani C, Gallardo H, Cremona M, Bechtold IH, Guimarães FEG. Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures [Internet]. Journal of Applied Physics. 2019 ; 126( 16): 165501-1-165501-9.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.5099014
Vancouver
Pereira A, Conte G, Faceto AD, Nunes LA de O, Quirino WG, Legnani C, Gallardo H, Cremona M, Bechtold IH, Guimarães FEG. Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures [Internet]. Journal of Applied Physics. 2019 ; 126( 16): 165501-1-165501-9.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.5099014
Artigo de periodico
Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications (2019)
Santa-Rosa, Washington; Silva Jr., Paulo Sergio da; M'Peko, Jean Claude; Amorín, Harvey; Algueró, Miguel; Venet, Michel
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: CERÂMICA, ÓPTICA NÃO LINEAR, FERROELETRICIDADE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTA-ROSA, Washington et al. Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications. Journal of Applied Physics, v. 125, n. 7, p. 075107-1-075107-8, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5063320. Acesso em: 10 maio 2024.
APA
Santa-Rosa, W., Silva Jr., P. S. da, M'Peko, J. C., Amorín, H., Algueró, M., & Venet, M. (2019). Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications. Journal of Applied Physics, 125( 7), 075107-1-075107-8. doi:10.1063/1.5063320
NLM
Santa-Rosa W, Silva Jr. PS da, M'Peko JC, Amorín H, Algueró M, Venet M. Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications [Internet]. Journal of Applied Physics. 2019 ; 125( 7): 075107-1-075107-8.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.5063320
Vancouver
Santa-Rosa W, Silva Jr. PS da, M'Peko JC, Amorín H, Algueró M, Venet M. Enhanced piezomagnetic coefficient of cobalt ferrite ceramics by Ga and Mn doping for magnetoelectric applications [Internet]. Journal of Applied Physics. 2019 ; 125( 7): 075107-1-075107-8.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.5063320
Artigo de periodico
Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer (2018)
Brenes-Badilla, D.; Coutinho, D. J.; Amorim, D. R. B.; Faria, Roberto Mendonça; Salvadori, Maria Cecília Barbosa da Silveira
Source: Journal of Applied Physics. Unidades: IFSC, IF
Subjects: POLÍMEROS (MATERIAIS), FILMES FINOS, CÉLULAS SOLARES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BRENES-BADILLA, D. et al. Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer. Journal of Applied Physics, v. 123, n. 15, p. 155502-1-155502-7, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5017672. Acesso em: 10 maio 2024.
APA
Brenes-Badilla, D., Coutinho, D. J., Amorim, D. R. B., Faria, R. M., & Salvadori, M. C. B. da S. (2018). Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer. Journal of Applied Physics, 123( 15), 155502-1-155502-7. doi:10.1063/1.5017672
NLM
Brenes-Badilla D, Coutinho DJ, Amorim DRB, Faria RM, Salvadori MCB da S. Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer [Internet]. Journal of Applied Physics. 2018 ; 123( 15): 155502-1-155502-7.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.5017672
Vancouver
Brenes-Badilla D, Coutinho DJ, Amorim DRB, Faria RM, Salvadori MCB da S. Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT: PSS layer [Internet]. Journal of Applied Physics. 2018 ; 123( 15): 155502-1-155502-7.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.5017672
Artigo de periodico
Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption (2018)
Martins, R. J.; Siqueira, J. P.; Clavero, I. Manglano; Margenfeld, C.; Fündling, S.; Vogt, A.; Waag, A.; Voss, T.; Mendonça, Cleber Renato
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SEMICONDUTORES, MAGNETISMO, DISPOSITIVOS ELETRÔNICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINS, R. J. et al. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption. Journal of Applied Physics, v. 123, n. 24, p. 243101-1-243101-5, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5027395. Acesso em: 10 maio 2024.
APA
Martins, R. J., Siqueira, J. P., Clavero, I. M., Margenfeld, C., Fündling, S., Vogt, A., et al. (2018). Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption. Journal of Applied Physics, 123( 24), 243101-1-243101-5. doi:10.1063/1.5027395
NLM
Martins RJ, Siqueira JP, Clavero IM, Margenfeld C, Fündling S, Vogt A, Waag A, Voss T, Mendonça CR. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption [Internet]. Journal of Applied Physics. 2018 ; 123( 24): 243101-1-243101-5.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.5027395
Vancouver
Martins RJ, Siqueira JP, Clavero IM, Margenfeld C, Fündling S, Vogt A, Waag A, Voss T, Mendonça CR. Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption [Internet]. Journal of Applied Physics. 2018 ; 123( 24): 243101-1-243101-5.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.5027395
Artigo de periodico
Discrimination of benign-versus-malignant skin lesions by thermographic images using support vector machine classifier (2018)
Stringasci, Mirian Denise; Salvio, Ana Gabriela; Sbrissa Neto, David; Vollet-Filho, José Dirceu; Bagnato, Vanderlei Salvador; Kurachi, Cristina
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: NEOPLASIAS (TRATAMENTO), CARCINOMA BASOCELULAR
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
STRINGASCI, Mirian Denise et al. Discrimination of benign-versus-malignant skin lesions by thermographic images using support vector machine classifier. Journal of Applied Physics, v. 124, n. 4, p. 044701-1-044701-8, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5036640. Acesso em: 10 maio 2024.
APA
Stringasci, M. D., Salvio, A. G., Sbrissa Neto, D., Vollet-Filho, J. D., Bagnato, V. S., & Kurachi, C. (2018). Discrimination of benign-versus-malignant skin lesions by thermographic images using support vector machine classifier. Journal of Applied Physics, 124( 4), 044701-1-044701-8. doi:10.1063/1.5036640
NLM
Stringasci MD, Salvio AG, Sbrissa Neto D, Vollet-Filho JD, Bagnato VS, Kurachi C. Discrimination of benign-versus-malignant skin lesions by thermographic images using support vector machine classifier [Internet]. Journal of Applied Physics. 2018 ; 124( 4): 044701-1-044701-8.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.5036640
Vancouver
Stringasci MD, Salvio AG, Sbrissa Neto D, Vollet-Filho JD, Bagnato VS, Kurachi C. Discrimination of benign-versus-malignant skin lesions by thermographic images using support vector machine classifier [Internet]. Journal of Applied Physics. 2018 ; 124( 4): 044701-1-044701-8.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.5036640
Artigo de periodico
Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells (2016)
Tito, M. A.; Pusep, Yuri A.; Gold, A.; Teodoro, M. D.; Marques, G. E.; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TITO, M. A. et al. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, v. 119, n. 9, p. 094301-1-094301-8, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4942854. Acesso em: 10 maio 2024.
APA
Tito, M. A., Pusep, Y. A., Gold, A., Teodoro, M. D., Marques, G. E., & LaPierre, R. R. (2016). Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, 119( 9), 094301-1-094301-8. doi:10.1063/1.4942854
NLM
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4942854
Vancouver
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4942854
Artigo de periodico
Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers (2016)
Tavares, B. G. M.; Tito, M. A.; Pusep, Yuri A.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TAVARES, B. G. M. e TITO, M. A. e PUSEP, Yuri A. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, v. 119, n. 23, p. 234305-1-234305-4, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4954161. Acesso em: 10 maio 2024.
APA
Tavares, B. G. M., Tito, M. A., & Pusep, Y. A. (2016). Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, 119( 23), 234305-1-234305-4. doi:10.1063/1.4954161
NLM
Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4954161
Vancouver
Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4954161
Artigo de periodico
Carrier transfer in vertically stacked quantum ring-quantum dot chains (2015)
Mazur, Yu. I.; Lopes-Oliveira, V.; Souza, L. D.; Lopez-Richard, V.; Teodoro, M. D.; Dorogan, V. G.; Benamara, M.; Wu, J.; Tarasov, G. G.; Marega Júnior, Euclydes; Wang, Z. M.; Marques, G. E.; Salamo, G. J.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MAZUR, Yu. I. et al. Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, v. 117, n. 15, p. 154307-1-154307-9, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4918544. Acesso em: 10 maio 2024.
APA
Mazur, Y. I., Lopes-Oliveira, V., Souza, L. D., Lopez-Richard, V., Teodoro, M. D., Dorogan, V. G., et al. (2015). Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, 117( 15), 154307-1-154307-9. doi:10.1063/1.4918544
NLM
Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Júnior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4918544
Vancouver
Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Júnior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4918544
Artigo de periodico
Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure (2014)
Barbosa, B. G.; Arakaki, Haroldo; Souza, Carlos Alberto de; Pusep, Yuri A.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SEMICONDUTORES, NANOTECNOLOGIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BARBOSA, B. G. et al. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. Journal of Applied Physics, v. 115, p. 114312-1-114312-5, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4869218. Acesso em: 10 maio 2024.
APA
Barbosa, B. G., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2014). Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure. Journal of Applied Physics, 115, 114312-1-114312-5. doi:10.1063/1.4869218
NLM
Barbosa BG, Arakaki H, Souza CA de, Pusep YA. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure [Internet]. Journal of Applied Physics. 2014 ; 115 114312-1-114312-5.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4869218
Vancouver
Barbosa BG, Arakaki H, Souza CA de, Pusep YA. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure [Internet]. Journal of Applied Physics. 2014 ; 115 114312-1-114312-5.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4869218
Artigo de periodico
Metallic nanoparticles grown in the core of femtosecond laser micromachined waveguides (2014)
Almeida, J. M. P.; Ferreira, P. H. D.; Manzani, Danilo ; Napoli, M.; Ribeiro, S. J. L.; Mendonça, Cleber Renato
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: ÓPTICA, NANOPARTÍCULAS, PRATA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALMEIDA, J. M. P. et al. Metallic nanoparticles grown in the core of femtosecond laser micromachined waveguides. Journal of Applied Physics, v. 115, n. 19, p. 193507-1-193507-5, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4875485. Acesso em: 10 maio 2024.
APA
Almeida, J. M. P., Ferreira, P. H. D., Manzani, D., Napoli, M., Ribeiro, S. J. L., & Mendonça, C. R. (2014). Metallic nanoparticles grown in the core of femtosecond laser micromachined waveguides. Journal of Applied Physics, 115( 19), 193507-1-193507-5. doi:10.1063/1.4875485
NLM
Almeida JMP, Ferreira PHD, Manzani D, Napoli M, Ribeiro SJL, Mendonça CR. Metallic nanoparticles grown in the core of femtosecond laser micromachined waveguides [Internet]. Journal of Applied Physics. 2014 ; 115( 19): 193507-1-193507-5.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4875485
Vancouver
Almeida JMP, Ferreira PHD, Manzani D, Napoli M, Ribeiro SJL, Mendonça CR. Metallic nanoparticles grown in the core of femtosecond laser micromachined waveguides [Internet]. Journal of Applied Physics. 2014 ; 115( 19): 193507-1-193507-5.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4875485
Artigo de periodico
Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains (2014)
Kondratenko, S. V.; Vakulenko, O. V.; Mazur, Yu. I.; Dorogan, V. G.; Marega Júnior, Euclydes; Benamara, M.; Ware, M. E.; Salamo, G. J.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
KONDRATENKO, S. V. et al. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains. Journal of Applied Physics, v. No 2014, n. 19, p. 193707-1-193707-11, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4902311. Acesso em: 10 maio 2024.
APA
Kondratenko, S. V., Vakulenko, O. V., Mazur, Y. I., Dorogan, V. G., Marega Júnior, E., Benamara, M., et al. (2014). Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains. Journal of Applied Physics, No 2014( 19), 193707-1-193707-11. doi:10.1063/1.4902311
NLM
Kondratenko SV, Vakulenko OV, Mazur YI, Dorogan VG, Marega Júnior E, Benamara M, Ware ME, Salamo GJ. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains [Internet]. Journal of Applied Physics. 2014 ; No 2014( 19): 193707-1-193707-11.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4902311
Vancouver
Kondratenko SV, Vakulenko OV, Mazur YI, Dorogan VG, Marega Júnior E, Benamara M, Ware ME, Salamo GJ. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains [Internet]. Journal of Applied Physics. 2014 ; No 2014( 19): 193707-1-193707-11.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4902311
Artigo de periodico
Strategies for reducing dye aggregation in luminescent host-guest systems: rhodamine 6G incorporated in new mesoporous sol-gel hosts (2013)
Queiroz, Thiago B.; Botelho, Moema B. S.; De Boni, Leonardo; Eckert, Hellmut; de Camargo, Andrea Simone Stucchi
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: LASER DO ESTADO SÓLIDO, CORANTES, LUMINESCÊNCIA, RESSONÂNCIA MAGNÉTICA NUCLEAR
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
QUEIROZ, Thiago B. et al. Strategies for reducing dye aggregation in luminescent host-guest systems: rhodamine 6G incorporated in new mesoporous sol-gel hosts. Journal of Applied Physics, v. 113, n. 11, p. 113508-1-113508-11, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4795506. Acesso em: 10 maio 2024.
APA
Queiroz, T. B., Botelho, M. B. S., De Boni, L., Eckert, H., & de Camargo, A. S. S. (2013). Strategies for reducing dye aggregation in luminescent host-guest systems: rhodamine 6G incorporated in new mesoporous sol-gel hosts. Journal of Applied Physics, 113( 11), 113508-1-113508-11. doi:10.1063/1.4795506
NLM
Queiroz TB, Botelho MBS, De Boni L, Eckert H, de Camargo ASS. Strategies for reducing dye aggregation in luminescent host-guest systems: rhodamine 6G incorporated in new mesoporous sol-gel hosts [Internet]. Journal of Applied Physics. 2013 ; 113( 11): 113508-1-113508-11.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4795506
Vancouver
Queiroz TB, Botelho MBS, De Boni L, Eckert H, de Camargo ASS. Strategies for reducing dye aggregation in luminescent host-guest systems: rhodamine 6G incorporated in new mesoporous sol-gel hosts [Internet]. Journal of Applied Physics. 2013 ; 113( 11): 113508-1-113508-11.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4795506
Artigo de periodico
Structure control of poly(p-phenylene vinylene) in layer-by-layer films by deposition on a charged poly(o-methoxyaniline) cushion (2013)
Marletta, Alexandre; Silva, Silésia de Fátima Curcino da; Piovesan, Erick; Campos, K. R.; Silva, Hugo Santos; Souza, N. C.; Vega, Maria Letícia; Raposo, Maria; Constantino, Carlos J. L.; Silva, Raigna A.; Oliveira Junior, Osvaldo Novais de
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FILMES FINOS, ESPECTROSCOPIA RAMAN, POLÍMEROS (MATERIAIS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARLETTA, Alexandre et al. Structure control of poly(p-phenylene vinylene) in layer-by-layer films by deposition on a charged poly(o-methoxyaniline) cushion. Journal of Applied Physics, v. 113, n. 14, p. 144509-1-144509-7, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4798937. Acesso em: 10 maio 2024.
APA
Marletta, A., Silva, S. de F. C. da, Piovesan, E., Campos, K. R., Silva, H. S., Souza, N. C., et al. (2013). Structure control of poly(p-phenylene vinylene) in layer-by-layer films by deposition on a charged poly(o-methoxyaniline) cushion. Journal of Applied Physics, 113( 14), 144509-1-144509-7. doi:10.1063/1.4798937
NLM
Marletta A, Silva S de FC da, Piovesan E, Campos KR, Silva HS, Souza NC, Vega ML, Raposo M, Constantino CJL, Silva RA, Oliveira Junior ON de. Structure control of poly(p-phenylene vinylene) in layer-by-layer films by deposition on a charged poly(o-methoxyaniline) cushion [Internet]. Journal of Applied Physics. 2013 ; 113( 14): 144509-1-144509-7.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4798937
Vancouver
Marletta A, Silva S de FC da, Piovesan E, Campos KR, Silva HS, Souza NC, Vega ML, Raposo M, Constantino CJL, Silva RA, Oliveira Junior ON de. Structure control of poly(p-phenylene vinylene) in layer-by-layer films by deposition on a charged poly(o-methoxyaniline) cushion [Internet]. Journal of Applied Physics. 2013 ; 113( 14): 144509-1-144509-7.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4798937
Artigo de periodico
Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures (2013)
Mazur, Yu. I.; Dorogan, V. G.; Marega Júnior, Euclydes; Guzun, D.; Ware, M. E.; Zhuchenko, Z. Ya.; Tarasov, G. G.; Lienau, C.; Salamo, G. J.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: POÇOS QUÂNTICOS, TEMPERATURA, ÓPTICA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MAZUR, Yu. I. et al. Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures. Journal of Applied Physics, v. 113, n. Ja 2013, p. 034309-1-034309-8, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4779686. Acesso em: 10 maio 2024.
APA
Mazur, Y. I., Dorogan, V. G., Marega Júnior, E., Guzun, D., Ware, M. E., Zhuchenko, Z. Y., et al. (2013). Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures. Journal of Applied Physics, 113( Ja 2013), 034309-1-034309-8. doi:10.1063/1.4779686
NLM
Mazur YI, Dorogan VG, Marega Júnior E, Guzun D, Ware ME, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures [Internet]. Journal of Applied Physics. 2013 ; 113( Ja 2013): 034309-1-034309-8.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4779686
Vancouver
Mazur YI, Dorogan VG, Marega Júnior E, Guzun D, Ware ME, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures [Internet]. Journal of Applied Physics. 2013 ; 113( Ja 2013): 034309-1-034309-8.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4779686
Artigo de periodico
Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires (2013)
Caface, R. A.; Guimarães, Francisco Eduardo Gontijo; Arakaki, Haroldo; Souza, Carlos Alberto de; Pusep, Yuri A.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CAFACE, R. A. et al. Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, v. 113, n. 6, p. 064315-1-064315-4, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4792301. Acesso em: 10 maio 2024.
APA
Caface, R. A., Guimarães, F. E. G., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2013). Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, 113( 6), 064315-1-064315-4. doi:10.1063/1.4792301
NLM
Caface RA, Guimarães FEG, Arakaki H, Souza CA de, Pusep YA. Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 6): 064315-1-064315-4.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4792301
Vancouver
Caface RA, Guimarães FEG, Arakaki H, Souza CA de, Pusep YA. Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 6): 064315-1-064315-4.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4792301
Artigo de periodico
Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires (2013)
Pusep, Yuri A.; Arakaki, Haroldo; Souza, Carlos Alberto de; Rodrigues, A. D.; Haapamaki, C. M.; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A. et al. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, v. 113, n. 16, p. 164311-1-164311-4, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4803494. Acesso em: 10 maio 2024.
APA
Pusep, Y. A., Arakaki, H., Souza, C. A. de, Rodrigues, A. D., Haapamaki, C. M., & LaPierre, R. R. (2013). Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, 113( 16), 164311-1-164311-4. doi:10.1063/1.4803494
NLM
Pusep YA, Arakaki H, Souza CA de, Rodrigues AD, Haapamaki CM, LaPierre RR. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 16): 164311-1-164311-4.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4803494
Vancouver
Pusep YA, Arakaki H, Souza CA de, Rodrigues AD, Haapamaki CM, LaPierre RR. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 16): 164311-1-164311-4.[citado 2024 maio 10 ] Available from: https://doi.org/10.1063/1.4803494

USP Schools

ReP

Filtros

Departament

Authors

USP affiliated authors

Date published

Subjects

Grupo de pesquisa

Funding Agencies

Normalized affiliation

Non normalized affiliation

Countries of institutions of collaboration